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Featured bySwansea University
Overview
Scholarship type
Merit based
Number of scholarships to award
Multiple
Grant
Full tuition waiver + £18,622
Scholarship coverage
- tuition fee reduction
- other
Description
The wide bandgap (WBG) power MOSFET is more prone to early failure than its Si counterparts despite its recent success. One of the most significant contributing factors to the overall reliability of these devices is degradation or even complete failure of the gate oxide. Specifically, gate threshold voltages shift from their original value with prolonged application, mainly due to gate oxide thickness reduction and high electric fields.
The goal of this project is to a) study and examine the failure mechanisms of WBG (particularly gallium nitride) devices, b) compare different methodologies for predicting or modelling the gate-oxide reliability of WBG power MOSFETs and identify the gap for both offline reliability and lifetime estimation and possible online condition monitoring from transistor signals, c) design, simulate and practically implement the required circuit configuration and the final multi-channel test rig for concurrent reliability testing and examining the failure mechanisms, d) develop conventional statistical approaches and artificial intelligence (AI) models from data provided by testing a large number of samples under controlled conditions to validate and generalise the research findings and e) recommend future work to implement the realised improvements.
Applicable programmes
Benefits
This scholarship covers the full cost of UK tuition fees and an annual stipend at UKRI rate (currently £18,622 for 2023/24).
Additional research expenses will also be available.
Eligibility
- Candidates must hold an undergraduate degree at 2.1 level in Engineering or similar relevant science discipline. If you are eligible to apply for the scholarship (i.e. a student who is eligible to pay the UK rate of tuition fees) but do not hold a UK degree, you can check their comparison entry requirements.
- Due to funding restrictions, this scholarship is open to applicants eligible to pay tuition fees at the UK rate only, as defined by UKCISA regulations.
Scholarship requirements
Disciplines
Multiple disciplines
Locations
United Kingdom
Nationality
Any
Study experience required
Master
Age
Unknown
Application
Application deadline
01 May 2024
To apply, please complete your application online with the following information:
Course choice – please select Electronic and Electrical Engineering / PhD / Full-time / 3 Years / July (or October)
Start year – please select 2024
Funding (page 8) –
‘Are you funding your studies yourself?’ – please select No
‘Name of Individual or organisation providing funds for study’ – please enter ‘RS563 - Gate-oxide reliability’
*It is the responsibility of the applicant to list the above information accurately when applying, please note that applications received without the above information listed will not be considered for the scholarship award.
One application is required per individual Swansea University led research scholarship award; applications cannot be considered listing multiple Swansea University led research scholarship awards.